| 摘要 |
Provided is a semiconductor device, capable of improving the reading and writing stability of SRAM. The semiconductor device includes a substrate, on which first and second areas are defined; a first fin type active pattern formed on the substrate in the first area, extended in a first direction, including first and second parts, and having the second part placed in both sides of the first part in the first direction; a second fin type active pattern formed on the substrate in the first area, extended in a second direction, including third and fourth parts, having the fourth part placed in both sides of the third part in the second direction, and having the fourth part recessed more than the third part; a first gate electrode extended in a third direction, and formed on the first part; a second gate electrode extended in a fourth direction, and formed on the third part; a first source/drain formed in the second part, and doped with a first type foreign substance; and a second source/drain including a first epi layer, doped with the first type foreign substance, and formed on the fourth part. |
