| 摘要 |
The present invention relates to a thin film transistor array substrate and a manufacturing method thereof, capable of preventing a leakage current by differentiating the thickness of a gate insulating film corresponding to the border and center of a channel area. The thin film transistor array substrate includes a semiconductor layer including a channel area, including a first area formed on the substrate and a second area placed in both sides of the first area, and a source area placed in a side of the channel area to be adjacent to the second area and a drain area placed in the other side of the channel area to be adjacent to the second area; a first gate insulating film formed to completely cover the semiconductor layer; a second gate insulating film formed on the first insulating film with materials, different from the first insulating film, and exposing the first gate insulating film corresponding to the first area of the channel area; a gate electrode overlapping the first area of the channel area via the first gate insulating film, and overlapping the second area of the channel area via the first and second gate insulating films; an interlayer insulating film formed to cover the gate electrode; a source electrode formed on the interlayer insulating film, and connected to the source area; and a drain electrode connected to the drain area. |
