发明名称 |
THERMALLY OPTIMIZED PHASE CHANGE MEMORY CELLS AND METHODS OF FABRICATING THE SAME |
摘要 |
<p>A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.</p> |
申请公布号 |
SG11201508704S(A) |
申请公布日期 |
2015.11.27 |
申请号 |
SG11201508704S |
申请日期 |
2014.05.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BONIARDI, MATTIA;REDAELLI, ANDREA |
分类号 |
H01L27/115;G11C13/02;H01L21/324 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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