CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR SHALLOW TRENCH ISOLATION (STI) AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To decrease nano-size particle related defects in chemical mechanical polishing (CMP) of shallow trench isolation (STI).SOLUTION: A processed chemical mechanical polishing (CMP) composition, or a CMP composition prepared by using processed cerium-oxide particles or processed cerium-oxide slurry is used to polish a base material having at least one surface including a silicon-dioxide film for an STI (shallow trench isolation) process and the application thereof. A method of removing, reducing or processing trace metal contaminants and relatively small fine cerium-oxide particles from the cerium-oxide particles, the cerium-oxide slurry or the chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) is applied.