发明名称 BACK SIDE DEPOSITION APPARATUS AND APPLICATIONS
摘要 The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or back side of a substrate. In various implementations, back side deposition occurs while the wafer is in a normal front side up orientation. The front/back side deposition may be performed to reduce stress introduced through deposition on the front side of the wafer. The back side deposition may also be performed to minimize back side particle-related problems that occur during post-deposition processing such as photolithography.
申请公布号 US2015340225(A1) 申请公布日期 2015.11.26
申请号 US201414285544 申请日期 2014.05.22
申请人 Lam Research Corporation 发明人 Kim Yunsang;Chattopadhyay Kaushik;Sexton Gregory;Hong Youn Gi
分类号 H01L21/02;C23C16/458;H01L21/67;H01L27/115;C23C16/52 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of depositing a film on a back side of a substrate, comprising: providing to a deposition reactor a substrate comprising a front side and a back side, the front side of the substrate comprising an active region comprising front side deposited material; securing the substrate in the deposition reactor such that the active region on the front side of the substrate does not contact any portion of the deposition reactor; and depositing the film on the back side of the substrate without depositing film on the front side of the substrate.
地址 Fremont CA US