发明名称 METHOD OF MANUFACTURING A MEMS STRUCTURE AND USE OF THE METHOD
摘要 A method creates MEMS structures by selectively etching a silicon wafer that is patterned by using a masking layer. The method comprises depositing and patterning a first mask on a silicon wafer to define desired first areas on the wafer to be etched. First trenches are etched on parts of the wafer not covered by the first mask. The first trenches are filled with a deposit layer. A part of the deposit layer is removed on desired second areas to be etched and a remainder is left on areas to function as a second mask to define final structures. Parts of the wafer on the desired second areas is etched, and the second mask is removed. A gyroscope or accelerator can be manufactured by dimensioning the structures.
申请公布号 US2015336794(A1) 申请公布日期 2015.11.26
申请号 US201514706095 申请日期 2015.05.07
申请人 MURATA MANUFACTURING CO., LTD. 发明人 TORKKELI Altti
分类号 B81C1/00 主分类号 B81C1/00
代理机构 代理人
主权项 1. A method of creating MEMS structures by selectively etching a silicon wafer that is patterned by using masking layers for defining the structural features of a MEMS device, the method comprising: a) depositing and patterning a first mask on a silicon wafer in order to define desired first areas on the wafer to be etched in a first trench etching and to define desired second areas to be etched in a second trench etching; b) etching first trenches on parts of the wafer not covered by the first mask in a first trench etching; c) filling the first trenches with a deposit layer; d) removing a part of the deposit layer on the desired second areas to be etched in the second trench etching and leaving a remainder on areas to function as a second mask in order to define final structures; e) etching parts of the wafer on the desired second areas in the second trench etching; and f) removing said second mask.
地址 Nagaokakyo-shi JP