MEMORY MANAGEMENT METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT

摘要

A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: grouping a plurality of non-spare physical erasing units into a first physical erasing unit and a second physical erasing unit, and a data updating frequency of the first physical erasing unit is lower than the data updating frequency of the second physical erasing unit; selecting a third physical erasing unit from the physical erasing units belonging to the first physical erasing unit; selecting a fourth physical erasing unit from spare physical erasing units, and copying valid data stored in the third physical erasing unit to the fourth physical erasing unit.

主权项

1. A memory management method, for managing a rewritable non-volatile memory module having a plurality of physical erasing units, and the memory management method comprising:
grouping a plurality of non-spare physical erasing units in the physical erasing units into at least one first physical erasing unit and at least one second physical erasing unit, wherein a data updating frequency of each of the at least one first physical erasing unit is lower than the data updating frequency of each of the at least one second physical erasing unit; selecting at least one third physical erasing unit from the at least one first physical erasing unit; selecting at least one fourth physical erasing unit from at least one spare physical erasing unit in the physical erasing units, and copying valid data stored in each of the at least one third physical erasing unit to the at least one fourth physical erasing unit.