| 摘要 |
PROBLEM TO BE SOLVED: To inhibit fluctuation in electrical characteristics and improve reliability in a semiconductor device using a transistor having an oxide semiconductor.SOLUTION: In a semiconductor device having a transistor, the transistor has a gate electrode, a first insulation film on the gate electrode, an oxide semiconductor film on the first insulation film, a source electrode electrically connected to the oxide semiconductor film, and a drain electrode electrically connected to the oxide semiconductor film. The semiconductor device has a second insulation film on the transistor and a protection film on the second insulation film, in which the second insulation film contains oxygen and the protection film contains at least one metal element the same with that in the oxide semiconductor film. |
