FIELD EFFECT TRANSISTOR AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a system and method which reduce power consumption in an electronic device.SOLUTION: Structure and methods can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology. The structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced sigma VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption.