CONTROL OF P-CONTACT RESISTANCE IN A SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A device according to embodiments of the invention includes a semiconductor device structure (10) including a light emitting region (14) disposed between an n-type semiconductor region (16) and a p-type semiconductor region (12). A surface of the p-type semiconductor region (12) perpendicular to a growth direction of the semiconductor device structure (10) includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact (21) disposed on the p-type semiconductor region (12) and an n-contact (26) disposed on the n-type semiconductor region (16). The p-contact (21) includes a contact metal layer (20) and a blocking material layer (24). The blocking material layer (24) is disposed over the first portion and no blocking material layer (24) is disposed over the second portion.

主权项

1. A device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein a surface of the p-type region comprises a first portion and a second portion, wherein the surface is perpendicular to a growth direction of the semiconductor structure, wherein the first portion is less conductive than the second portion; and a p-contact formed on the p-type region, the p-contact comprising: a reflector; and a blocking material, wherein the blocking material is disposed over the first portion and no blocking material is disposed over the second portion.