III-V Group Compound Devices with Improved Efficiency and Droop Rate

摘要

A photonic device includes: a first-type III-V group layer; a second-type III-V group layer formed on the first-type III-V group layer; and a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer; wherein: the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer; a material of each barrier layer comprises semiconductor compound devoid of Al element; the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and the barrier layers of the first group layers comprise uniform thickness.

主权项

1. A photonic device, comprising:
a first-type III-V group layer; a second-type III-V group layer formed on the first-type III-V group layer; and a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer; wherein: the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer; a material of each barrier layer comprises semiconductor compound devoid of Al element; the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and the barrier layers of the first group layers comprise uniform thickness.