发明名称 |
ADVANCED TRANSISTORS WITH THRESHOLD VOLTAGE SET DOPANT STRUCTURES |
摘要 |
An advanced transistor with threshold voltage set dopant structure includes a gate with length Lg and a well doped to have a first concentration of a dopant. A screening region is positioned between the well and the gate and has a second concentration of dopant greater than 5×1018 dopant atoms per cm3. A threshold voltage set region is formed by placement of a threshold voltage offset plane positioned above the screening region. The threshold voltage set region may be formed by delta doping and have a thickness between Lg/5 and Lg/1 The structure uses minimal or no halo implants to maintain channel dopant concentration at less than 5×1017 dopant atoms per cm3. |
申请公布号 |
US2015340460(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
US201514811985 |
申请日期 |
2015.07.29 |
申请人 |
MIE Fujitsu Semiconductor Limited |
发明人 |
Shifren Lucian;Ranade Pushkar;Scudder Lance |
分类号 |
H01L29/66;H01L21/265 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kuwana JP |