发明名称 |
Buried fin contact structures on FinFET semiconductor devices |
摘要 |
A method includes forming a raised isolation structure with a recess above a substrate, forming a gate structure above the fin, forming a plurality of spaced-apart buried fin contact structures within the recess that have an outer perimeter surface that contacts at least a portion of an interior perimeter surface of the recess and forming at least one source/drain contact structure for each of the buried fin contact structures. One device includes a plurality of spaced-apart buried fin contact structures positioned within a recess in a raised isolation structure on opposite sides of a gate structure. The upper surface of each of the buried fin contact structures is positioned below an upper surface of the raised isolation structure and an outer perimeter surface of each of the buried fin contact structures contacts at least a portion of an interior perimeter surface of the recess. |
申请公布号 |
US2015340452(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
US201514817628 |
申请日期 |
2015.08.04 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Xie Ruilong;Kim Ryan Ryoung-Han;Taylor, JR. William J. |
分类号 |
H01L29/417;H01L27/088;H01L29/06;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Grand Cayman KY |