TRENCH INSULATED GATE BIPOLAR TRANSISTOR AND EDGE TERMINAL STRUCTURE

摘要

An edge terminal structure of a power semiconductor device includes a second conductive-type substrate, a first conductive-type buffer layer, a first conductive-type epitaxial layer, a first and a second electrodes, and a first and a second field plates. A trench is in a surface of the first conductive-type epitaxial layer in an edge terminal area beside an active area of the power semiconductor device. The first field plate includes at least a L-shaped electric-plate, a gate insulation layer under the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes a portion of the first electrode and at least an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer. The insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.

主权项

1. An edge terminal structure of a trench power semiconductor device, wherein the power semiconductor device is a trench insulated gate bipolar transistor and comprises an active area and an edge terminal area, the edge terminal structure comprising:
a second conductive-type substrate; a first conductive-type buffer layer formed on the second conductive-type substrate; a first conductive-type epitaxial layer formed on the first conductive-type buffer layer, wherein a trench being located in a surface of the first conductive-type epitaxial layer in the edge terminal area beside the active area; a first electrode located on the surface of the first conductive-type epitaxial layer; a second electrode located on a back of the second conductive-type substrate; a first field plate disposed on a sidewall of the trench and extending toward a tail of the trench, wherein the first field plate comprises at least an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate; and a second field plate comprising a portion of the first electrode and at least an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer, wherein the insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.