发明名称 CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
摘要 A capacitor structure including at least one capacitor unit is provided. The capacitor unit includes a dielectric layer, an inner metal layer and an outer metal layer. The inner metal layer is disposed in the dielectric layer. The outer metal layer is disposed in the dielectric layer and surrounds the inner metal layer. The outer metal layer includes a first metal layer, two second metal layers and a third metal layer. The first metal layer is disposed under the inner metal layer. The second metal layers are disposed at two sides of the inner metal layer, and lower surfaces of the second metal layers are located equal to or below a lower surface of the inner metal layer. The third metal layer is disposed over the inner metal layer and connects to the second metal layers.
申请公布号 US2015340427(A1) 申请公布日期 2015.11.26
申请号 US201414497345 申请日期 2014.09.26
申请人 Powerchip Technology Corporation 发明人 Nagai Yukihiro;Chen Hui-Huang;Chen Ching-Hua;Lin Ying-Chia
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A capacitor structure, comprising at least one capacitor unit, and the at least one capacitor unit comprising: a dielectric layer; an inner metal layer, disposed in the dielectric layer; and an outer metal layer, disposed in the dielectric layer, and surrounding the inner metal layer, wherein the outer metal layer comprises: a first metal layer, disposed under the inner metal layer;two second metal layers, disposed at two sides of the inner metal layer, and lower surfaces of the second metal layers being located equal to or below a lower surface of the inner metal layer; anda third metal layer, disposed over the inner metal layer, and connecting to the second metal layers.
地址 Hsinchu TW