INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGION AND A BULK REGION

摘要

A structure comprises a semiconductor substrate, a semiconductor-on-insulator region and a bulk region. The semiconductor-on-insulator region comprises a first semiconductor region, a dielectric layer provided between the semiconductor substrate and the first semiconductor region, and a first transistor comprising an active region provided in the first semiconductor region. The dielectric layer provides electrical isolation between the first semiconductor region and the semiconductor substrate. The bulk region comprises a second semiconductor region provided directly on the semiconductor substrate.

主权项

1. A structure, comprising:
a semiconductor substrate; a semiconductor-on-insulator region, said semiconductor-on-insulator region comprising a first semiconductor region that contains a first active region, a dielectric layer provided between said semiconductor substrate and said first semiconductor region, and a first transistor positioned in and above said first active region in said first semiconductor region, said dielectric layer providing electrical isolation between said first semiconductor region and said semiconductor substrate; and a bulk region, said bulk region comprising a second semiconductor region provided directly on said semiconductor substrate.