| 发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
In One method for manufacturing a semiconductor device, a conductive bump is formed on the surface of a semiconductor wafer so as to create a first bump opening area, and a dummy bump is formed on the surface of the semiconductor wafer so as to form a second bump opening area. In such a case, the dummy bump is formed such that the total of the first bump opening area and the second bump opening area is a value corresponding to the opening area of a conductive bump of a semiconductor wafer having only the conductive bump, whereby the semiconductor device is manufactured. |
| 申请公布号 |
US2015340339(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201414761545 |
申请日期 |
2014.01.14 |
| 申请人 |
Sacho Yutaka |
发明人 |
Sacho Yutaka |
| 分类号 |
H01L25/065;H01L23/00;H01L21/78 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
forming a first bump on the surface of a first wafer in such a way as to achieve a first bump opening area, and forming a dummy bump on the surface of the first wafer in such a way as to achieve a second bump opening area; wherein forming the dummy bump comprises forming the dummy bump in such a way that the total of the first bump opening area and the second bump opening area is a value corresponding to the first bump opening area of a second wafer, which is another wafer having only the first bump. |
| 地址 |
Tokyo JP |
