NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE

摘要

A 3D device, including: a first layer including a first memory including a first transistor; and a second layer including a second memory including a second transistor; where the second transistor is self-aligned to the first transistor, and where the first transistor and the second transistor each being a junction-less transistor.

主权项

1. A 3D device, comprising:
a first layer comprising a first memory comprising a first transistor; and a second layer comprising a second memory comprising a second transistor;
wherein said second transistor is self-aligned to said first transistor, andwherein said first transistor and said second transistor each being a junction-less transistor.