| 摘要 |
The present invention relates to a transistor including a selection of at least one from at least one bending deformation of graphene or position shift to control at least one work function, and provides a transistor including a selection of at least one from at least one bending deformation of graphene or position shift, and including, in a lower portion of the graphene, a selection of at least one from the control of at least one Schottky barrier height or the control of at least one Fermi level height and a selection of at least one from at least one of piezo materials, magnetic particles, particles having a charge, or charged particles to control at least one work function such that the selection of at least one from at least one of piezo materials, magnetic particles, particles having a charge, or charged particles leads to the selection of at least one from at least one bending deformation of graphene or position shift due to the electrostatic levels of crossing barrier control circuits. Also, the present invention relates to a transistor including a selection of at least one from at least one bending deformation of graphene or position shift to control at least one work function, and provides a transistor including a selection of at least one from at least one bending deformation of graphene or position shift to control at least one work function such that a selection of at least one from the control of at least one Schottky barrier height or the control of at least one Fermi level height leads to the selection of at least one from at least one bending deformation of graphene or position shift due to the electrostatic levels of crossing barrier control circuits. |
