| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing a wafer capable of removing a laminate including a low dielectric constant insulating film without generating delamination.SOLUTION: A method includes: a surface protection member arrangement step of arranging a surface protection member 19 on a laminate of a wafer 11; a holding step of, after performing the surface protection member arrangement step, holding the wafer by holding means 14 via the surface protection member to expose the substrate side; a cutting groove formation step of, after performing the holding step, forming on the substrate 12 of the wafer a cutting groove 21 where the substrate is not completely cut out in a thickness direction by using a first cutting blade with a first thickness along a division schedule line, and forming a first uncut part of the substrate under the cutting groove; and a cutting step of, after performing the cutting groove formation step, cutting the first uncut part and the lamination body 13 by using a second cutting blade 18 with a second thickness thinner than the first thickness or by etching along the division schedule line. |
