发明名称 SUBSTRATE TREATMENT DEVICE
摘要 A substrate treatment device (1) comprises: an electrostatic chuck (18) that has a heater (21) therein and that heats a wafer (W) mounted on a top surface of the electrostatic chuck; a support table (14) that is provided under the electrostatic chuck (18) and that causes heat from the electrostatic chuck (18) to diffuse; a spacer (16) that is provided between the electrostatic chuck (18) and the support table (14) and that forms a space between the electrostatic chuck (18) and the support table (14); and a fixing member (13) that surrounds the peripheral edge of the electrostatic chuck (18) and that fixes the electrostatic chuck (18) and the spacer (16) to the support table (14). At least a portion of the spacer (16) contacts the electrostatic chuck (18) and the support table (14). The fixing member (13) has an elastic member (132), and fixes the electrostatic chuck (18) and the spacer (16) to the support table (14) by a biasing force that is applied by the elastic member (132) in a direction from the electrostatic chuck (18) toward the support table (14).
申请公布号 WO2015178229(A1) 申请公布日期 2015.11.26
申请号 WO2015JP63367 申请日期 2015.05.08
申请人 TOKYO ELECTRON LIMITED 发明人 YAMAGISHI, KOJI;KANEKO, HIROSHI;OSHIKIRI, JOUJI
分类号 H01L21/683;B23Q3/15 主分类号 H01L21/683
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