SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable transistor and a semiconductor device using the transistor.SOLUTION: A semiconductor device includes: a gate electrode; a gate insulating film on the gate electrode; an oxide semiconductor film on the gate insulating film; and a source electrode and a drain electrode on the oxide semiconductor film. In the semiconductor device, activation energy of the oxide semiconductor film obtained from temperature dependence of current (on current) flowing between the source electrode and the drain electrode when voltage greater than or equal to threshold voltage is applied to the gate electrode is 0 meV or more and 25 meV or less.