SEMICONDUCTOR DEVICES AND METHOD OF MAKING THE SAME

摘要

In one embodiment, the semiconductor devices relate to using one or more super-junction trenches for termination.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type; an epitaxial layer of the first conductivity type overlying the semiconductor substrate; a dielectric layer overlying the epitaxial layer; and an edge termination structure surrounding an active region of the semiconductor device, wherein the edge termination structure comprises one or more first super-junction trenches formed at least in part in the epitaxial layer, wherein the first super-junction trenches each comprise:
a first semiconducting region adjacent to the epitaxial layer, wherein the first semiconducting region has a second conductivity type;a second semiconducting region adjacent to the first semiconducting region, wherein the second semiconducting region has a third conductivity type that is different than the second conductivity type;a first buffer region adjacent to the second semiconducting region;a third semiconducting region adjacent to the first buffer region, wherein the third semiconducting region has the third conductivity type;a fourth semiconducting region adjacent to the third region and the epitaxial layer, wherein the fourth region has the second conductivity type; anda first conducting region electrically coupling the second semiconducting region to the third semiconducting region, wherein the first conducting region is adjacent to the dielectric layer.