METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

摘要

A method of filling a dielectric trench includes forming two adjacent conductors on a substrate, forming a dielectric layer over a surface of the conductors and the substrate, removing a portion of the dielectric layer, treating a top surface of the dielectric layer with phosphorous plasma, and repeating the forming the dielectric layer, the removing the portion of the dielectric layer, and the treating the top surface of the dielectric layer in a multi cycle fashion. A narrowest width of the dielectric trench between the two adjacent conductors is smaller than about 30 nm.

主权项

1. A method of manufacturing a semiconductor structure, comprising:
forming a surface on a substrate; forming a dielectric layer over the surface; etching the dielectric layer; and treating a top surface of the dielectric layer with plasma.