SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL

摘要

A method includes applying a programming voltage to a drain of an access transistor, where a source of the access transistor is coupled to a drain region of a one-time programmable (OTP) device. The method also includes applying a first voltage to a gate of the OTP device and a second voltage to a terminal of the OTP device to bias a channel region of the OTP device, where the first voltage and the second voltage are substantially equal.

主权项

1. An apparatus comprising:
a processor; and a memory storing instructions executable by the processor to perform operations comprising:
applying a programming voltage to a drain of an access transistor, wherein a source of the access transistor is coupled to a drain region of a one-time programmable (OTP) device; andapplying a first voltage to a gate of the OTP device and a second voltage to a terminal of the OTP device to bias a channel region of the OTP device, wherein the first voltage and the second voltage are substantially equal.