CALIBRATION CURVE FORMATION METHOD, IMPURITY CONCENTRATION MEASUREMENT METHOD, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD

摘要

According to an embodiment, a method of forming a calibration curve is provided. The method includes ion-implanting different doses of an impurity into a plurality of first samples, measuring an intensity of photoluminescence deriving from the impurity by a photoluminescence spectroscopy for the first samples and a second sample made of the same semiconductor. Based on the amount of implanted impurity, the intensity of the photoluminescence, and a concentration of the impurity contained in the second sample measured by a method other than the photoluminescence spectroscopy, a calibration curve is formed.

主权项

1. A formation method of forming a calibration curve, characterized by comprising:
ion-implanting different doses of an impurity into a plurality of first samples made of the same semiconductor; measuring by a photoluminescence spectroscopy, for each of the plurality of first sample into which the impurity is ion-implanted, an intensity of photoluminescence deriving from the impurity, and obtaining a relationship between the dose of the implanted impurity and the intensity of the photoluminescence; measuring by the photoluminescence spectroscopy, for a second sample made of the same semiconductor as that of the plurality of first samples, an intensity of photoluminescence deriving from the impurity contained in the second sample, the measurement being performed under the same conditions as those for the measurement by the photoluminescence spectroscopy of the intensity of the photoluminescence for each of the plurality of first samples; and forming, based on the relationship, the intensity of the photoluminescence obtained for the second sample, and a concentration of the impurity contained in the second sample, which is measured by a method other than the photoluminescence spectroscopy, a calibration curve representing a relationship between the concentration of the impurity and the intensity of the photoluminescence deriving from the impurity.