PREPARATION METHOD FOR NITRIDE LIGHT-EMITTING DIODE ASSEMBLY

摘要

Provided is a preparation method for a nitride light-emitting diode assembly, which has the advantages of reducing electronic leakage, reducing an efficiency droop effect, enhancing a hole concentration and enhancing light-emitting efficiency. The method is implemented using the following steps: providing a transition substrate (100); growing a P-type semiconductor layer (102) and a first bonding layer (103a) on the transition substrate (100) in sequence; providing a permanent substrate (104); growing an N-type semiconductor layer (106), a light-emitting layer (107) and a second bonding layer (103b) on the permanent substrate (104)in sequence; and bonding the transition substrate (100) on which the P-type semiconductor layer (102) is grown to the permanent substrate (104) on which the N-type semiconductor layer (106) and the light-emitting layer (107) are grown via the first bonding layer (103a) and the second bonding layer (103b).