发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450 degrees C and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film. |
申请公布号 |
WO2015177685(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
WO2015IB53510 |
申请日期 |
2015.05.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TANAKA, TETSUHIRO;SAKAKURA, MASAYUKI;TOKUMARU, RYO;YAMANE, YASUMASA;SATO, YUHEI |
分类号 |
H01L29/786;H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/06;H01L27/08;H01L27/092;H01L27/105;H01L27/108 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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