PHOTONIC SEMICONDUCTOR DEVICE FOR ENHANCED PROPAGATION OF RADIATION AND METHOD OF PRODUCING SUCH A SEMICONDUCTOR DEVICE

摘要

The semiconductor device comprises a semiconductor substrate (2), a transition layer (5) in or on the semiconductor substrate, the transition layer allowing propagation of incident radiation (7) according to a refractive index, and a photonic component (4) facing the transition layer. A surface (6) of the transition layer is structured such that the effective refractive index is gradually changed through the transition layer with changing distance from the photonic component.