| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide: a semiconductor device arranged so that a leak current in an opposite direction can be suppressed; and a method for manufacturing such a semiconductor device.SOLUTION: A semiconductor device according to the present invention comprises: an AlGaN barrier layer 4; and a SiN surface protection film 8 formed on the AlGaN barrier layer 4. The surface protection film 8 is higher in the rate of nitrogen in terms of Si/N ratio in comparison to a stoichiometric SiN. In the surface protection film 8, the content of hydrogen is less than 10%. |
| 申请公布号 |
JP2015213100(A) |
申请公布日期 |
2015.11.26 |
| 申请号 |
JP20140094492 |
申请日期 |
2014.05.01 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KURAHASHI KENICHIRO;NANJO TAKUMA;YAGYU EIJI;OKAZAKI HIROYUKI |
| 分类号 |
H01L21/337;H01L21/28;H01L21/283;H01L21/318;H01L21/336;H01L21/338;H01L21/768;H01L23/532;H01L29/41;H01L29/423;H01L29/47;H01L29/49;H01L29/778;H01L29/78;H01L29/786;H01L29/808;H01L29/812;H01L29/872 |
主分类号 |
H01L21/337 |
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