SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE LAYERS AND OVERLYING SEMICONDUCTOR LAYERS HAVING CLOSELY MATCHING COEFFICIENTS OF THERMAL EXPANSION, AND RELATED METHODS

摘要

Embodiments relate to semiconductor structures and methods of forming semiconductor structures. The semiconductor structures include a substrate layer having a CTE that closely matches a CTE of one or more layers of semiconductor material formed over the substrate layer. In some embodiments, the substrate layers may comprise a composite substrate material including two or more elements. The substrate layers may comprise a metal material and/or a ceramic material in some embodiments.

主权项

1. A semiconductor structure, comprising:
a composite substrate layer; a first semiconductor layer disposed over a surface of the composite substrate layer; and at least one additional semiconductor layer epitaxially deposited over the first semiconductor layer on a side thereof opposite the composite substrate layer; wherein the composite substrate layer exhibits a CTE closely matching a CTE of at least one of the first semiconductor layer and the at least one additional semiconductor layer.