VERTICAL MEMORY DEVICES WITH VERTICAL ISOLATION STRUCTURES AND METHODS OF FABRICATING THE SAME

摘要

A vertical memory device includes a substrate, a column of vertical channels on the substrate and spaced apart along a direction parallel to the substrate, respective charge storage structures on sidewalls of respective ones of the vertical channels and gate electrodes vertically spaced along the charge storage structures. The vertical memory device further includes an isolation pattern disposed adjacent the column of vertical channels and including vertical extension portions extending parallel to the vertical channels and connection portions extending between adjacent ones of the vertical extension portions.

主权项

1. A vertical memory device, comprising:
a plurality of vertical channels extending upwards from a substrate in a first direction and arranged on a substrate in second and third directions perpendicular to the first direction in a zigzag pattern as a channel array; a plurality of charge storage structures surrounding the plurality of the vertical channels, respectively, thereby extending in the first direction; a plurality of line-shaped gate electrodes extending in the third direction and arranged on sidewalls of the plurality of the charge storage structures and configured to gate structures together with the charge storage structures, the gate structures including at least a ground selection line (GSL), at least a string selection line (SSL) and a plurality of word lines (WL) interposed between the GSL and the SSL; and an isolation pattern extending in the third direction between adjacent ones of the charge storage structures, the isolation pattern including vertical extension portions that extend along the vertical channel in the first direction and have bottom surfaces making contact with the substrate and top surfaces higher than the SSL and connection portions that connect the vertical extension portions in third direction and have bottom surfaces between the SSL and the WL.