| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines. |
| 申请公布号 |
US2015340373(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514814756 |
申请日期 |
2015.07.31 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Seung Cheol;LEE Yang Bok |
| 分类号 |
H01L27/115;H01L21/02;H01L21/8234;H01L21/311;H01L21/762;H01L21/764 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers; performing a dry-etch process to remove the isolation layers; and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines. |
| 地址 |
Icheon-si Gyeonggi-do KR |
