| 发明名称 |
SACRIFICIAL OXIDE WITH UNIFORM THICKNESS |
| 摘要 |
A semiconductor device includes a silicon-based substrate, a gate structure and a laminated sacrificial oxide layer. The gate structure is on the silicon-based substrate. The laminated sacrificial oxide layer has a first portion on the silicon-based substrate and a second portion conformal to the gate structure, in which a first thickness of the first portion is substantially the same as a second thickness of the second portion. The laminated sacrificial oxide layer includes a native oxide layer and a silicon oxy-nitride layer. The native oxide layer is on the silicon-based substrate and conformal to the gate structure. The silicon oxy-nitride layer is conformal to the native oxide layer. |
| 申请公布号 |
US2015340361(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514817041 |
申请日期 |
2015.08.03 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHIU Yi-Wei;TSAI Hsin-Yi;WENG Tzu-Chan;HSU Li-Te |
| 分类号 |
H01L27/088;H01L29/51;H01L29/49 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a silicon-based substrate; a gate structure on the silicon-based substrate; and a laminated sacrificial oxide layer having a first portion on the silicon-based substrate and a second portion conformal to the gate structure, wherein a first thickness of the first portion is substantially the same as a second thickness of the second portion, and the laminated sacrificial oxide layer comprises:
a native oxide layer on the silicon-based substrate and conformal to the gate structure; anda silicon oxy-nitride layer conformal to the native oxide layer. |
| 地址 |
Hsinchu TW |
