| 发明名称 |
CHEMICAL VAPOR DEPOSITION GROWTH OF GRAPHENE |
| 摘要 |
A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar. |
| 申请公布号 |
US2015337458(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201414759134 |
申请日期 |
2014.01.08 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
Duan Xiangfeng;Zhou Hailong |
| 分类号 |
C30B25/18;C30B29/02;C01B31/04 |
主分类号 |
C30B25/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process of growing graphene, comprising:
providing a metal substrate; annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and introducing a gas mixture to grow graphene over the metal substrate, wherein the gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar. |
| 地址 |
Oakland CA US |
