| 发明名称 |
METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR |
| 摘要 |
Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti1-vCrv)xAly (N1-wOw)z (where 0.0<v<1.0, 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. |
| 申请公布号 |
US2015337433(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201314652686 |
申请日期 |
2013.12.03 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Fujita Toshiaki;Tanaka Hiroshi;Nagatomo Noriaki |
| 分类号 |
C23C14/34;H01C17/12;G01K7/22;H01C7/00 |
主分类号 |
C23C14/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: (Ti1-vCrv)xAly(N1-wOw)z (where 0.0<v<1.0, 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. |
| 地址 |
Chiyoda-ku, Tokyo JP |
