发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING MOS TRANSISTOR
摘要 [Problem] To provide: a semiconductor device able to suppress leak current in an MOS transistor; and a method for controlling an MOS transistor. [Solution] The semiconductor device is equipped with an MOS transistor and a voltage imposition unit that is for imposing onto the substrate of the MOS transistor a voltage for controlling the MOS transistor threshold to the lower direction when the MOS transistor is off.
申请公布号 WO2015177982(A1) 申请公布日期 2015.11.26
申请号 WO2015JP02378 申请日期 2015.05.11
申请人 SONY CORPORATION 发明人 SUZUKI, TSUYOSHI
分类号 H03K19/094;H01L21/822;H01L21/8238;H01L27/04;H01L27/092 主分类号 H03K19/094
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