发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING MOS TRANSISTOR |
摘要 |
[Problem] To provide: a semiconductor device able to suppress leak current in an MOS transistor; and a method for controlling an MOS transistor. [Solution] The semiconductor device is equipped with an MOS transistor and a voltage imposition unit that is for imposing onto the substrate of the MOS transistor a voltage for controlling the MOS transistor threshold to the lower direction when the MOS transistor is off. |
申请公布号 |
WO2015177982(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
WO2015JP02378 |
申请日期 |
2015.05.11 |
申请人 |
SONY CORPORATION |
发明人 |
SUZUKI, TSUYOSHI |
分类号 |
H03K19/094;H01L21/822;H01L21/8238;H01L27/04;H01L27/092 |
主分类号 |
H03K19/094 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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