| 摘要 |
The purpose of the present invention is to provide a vertical MOSFET structure having high functionality and high reliability, by using a trench structure and curbing an electrical field applied to a gate insulation film of the lower part of the trench. The present invention provides a semiconductor device comprising: a first conductivity-type semiconductor substrate; a drain electrode formed on the rear side of the semiconductor substrate; a first conductivity-type drift layer that is formed on the semiconductor substrate; a first conductivity-type source region; a first conductivity-type current diffusion layer that is electrically connected to the drift layer; a second conductivity-type body layer that is contact with the source region and the current diffusion layer; a trench that extends to the source region, the body layer, and the current diffusion layer, that is shallower than the body layer, and the bottom surface of which is in contact with the body layer; a gate insulation film that is formed on the inner walls of the trench; and a gate electrode that is formed on the gate insulation film. Due to this configuration, high functionality and high reliability can be achieved. |
