OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

An oxide thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method comprises: forming a gate electrode (1), a gate insulating layer (4) and an oxide semiconductor thin film (10) sequentially on a substrate; forming a first photoresist (11a) above an active layer region of the oxide semiconductor thin film (10), such that a thickness of the first photoresist above a channel region is greater than a thickness of the first photoresist above a non-channel region; reserving the first photoresist (11a) above the channel region; forming a source-drain metal thin film and a second photoresist (11b) sequentially on a pattern of an active layer, removing a portion of the source-drain metal thin film and a portion of the second photoresist (11b), such that an edge of the first photoresist (11a) above the channel region is covered with the source-drain metal thin film; and obtaining patterns of a source electrode and a drain electrode. Upon preliminary patterns of the source electrode and the drain electrode are formed, the photoresist instead of a protective layer is used to protect the active layer, therefore shortening a length of a channel of the oxide thin film transistor.

主权项

1. A manufacturing method of oxide thin film transistor, comprising:
forming a gate electrode and a gate insulating layer sequentially on a substrate; forming an oxide semiconductor thin film on the gate insulating layer, and forming a first photoresist above an active layer region of the oxide semiconductor thin film, wherein a thickness of the first photoresist above a channel region is greater than a thickness of the first photoresist above a non-channel region; removing the oxide semiconductor thin film of an non-active layer region to form a pattern of an active layer, removing the first photoresist above the non-channel region, and reserving the first photoresist above the channel region; forming a source-drain metal thin film and a second photoresist sequentially on the pattern of the active layer, removing a portion of partial source-drain metal thin film corresponding to the first photoresist above the channel region and a portion of partial second photoresist corresponding to the first photoresist above the channel region, such that an edge of the first photoresist above the channel region is covered by the source-drain metal thin film; lifting off the remaining second photoresist, the source-drain metal thin film covering the edge of the first photoresist above the channel region, and the first photoresist above the channel region to form patterns of a source electrode and a drain electrode.