LATCH-UP ROBUST SCR-BASED DEVICES

摘要

An approach for providing a latch-up robust silicon control rectifier (SCR) is disclosed. Embodiments include providing a first N+ region and a first P+ region in a substrate for a SCR; providing first and second n-well regions in the substrate proximate the first N+ and P+ regions; providing a second N+ region in the first n-well region, and a second P+ region in the second n-well region; and coupling the first N+ and P+ regions to a ground rail, the second N+ region to a power rail, and the second P+ region to an I/O pad.

主权项

1. A device comprising:
a first n-well region in a substrate for a silicon control rectifier (SCR); a first N+ region and a first P+ region in the substrate on a first side of the first n-well region; a second n-well on a second side of the first n-well region that is opposite the first side; a second N+ region in the first n-well region, and a second P+ region in the second n-well region, wherein the first N+ and P+ regions are coupled to a ground rail, the second N+ region is coupled to a power rail, the second P+ region is coupled to an I/O pad, and a holding voltage of the SCR that is greater than a maximum operating voltage of the SCR during a latch-up event is provided by turning on the power rail; a third P+ region between the second N+ and P+ regions; a resistor having first and second resistor terminals; a capacitor having first and second capacitor terminals; and the third P+ region is coupled to the first resistor and capacitor terminals, the second resistor terminal is coupled to the ground rail, and the second capacitor terminal is coupled to the I/O pad.