| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE |
| 摘要 |
A method for manufacturing a semiconductor device includes: forming a temporary gate electrode and a first dummy gate electrode located on a first side of the temporary gate electrode, on a semiconductor region with a first lattice constant; forming a first semiconductor layer with a second lattice constant different from the first lattice constant, between the temporary gate electrode and the first dummy gate electrode; removing the temporary gate electrode while leaving the first dummy gate electrode intact; and forming a gate electrode in a region from which the temporary gate electrode is removed. |
| 申请公布号 |
US2015340466(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514712064 |
申请日期 |
2015.05.14 |
| 申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
Fukuda Masahiro;Kubo Tomohiro |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device comprising:
forming a temporary gate electrode and a first dummy gate electrode located on a first side of the temporary gate electrode, on a semiconductor region with a first lattice constant; forming a first semiconductor layer with a second lattice constant different from the first lattice constant, between the temporary gate electrode and the first dummy gate electrode; removing the temporary gate electrode while leaving the first dummy gate electrode intact; and forming a gate electrode in a region from which the temporary gate electrode is removed. |
| 地址 |
Yokohama-shi JP |
