发明名称 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME, AND DISPLAY DEVICE
摘要 The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the array substrate, and a display device. The thin film transistor includes a substrate and a gate, an insulation layer, an active layer, a source and a drain which are provided on the substrate. A spacer layer is also provided between the gate and the active layer, and the spacer layer overlaps at least with one of the gate and the active layer having a smaller area in an orthographic projection direction. The spacer layer can effectively prevent material forming the gate from being diffused into the active layer, thereby ensuring stability of performance of the thin film transistor. In the array substrate utilizing the thin film transistor, the spacer layer further extends to a region corresponding to a gate line.
申请公布号 US2015340455(A1) 申请公布日期 2015.11.26
申请号 US201314376028 申请日期 2013.11.27
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 CAO Zhanfeng;YAO Qi;DING Luke;SUN Bing;KONG Xiangchun
分类号 H01L29/423;H01L29/51;H01L29/786;H01L29/49;G02F1/1368;H01L27/12 主分类号 H01L29/423
代理机构 代理人
主权项
地址 Beijing CN