发明名称 CAPACITOR FOR TFT ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DEVICES ASSOCIATED WITH THE SAME
摘要 The present invention discloses a capacitor for a TFT array substrate and a method of manufacturing the same, and the present invention further discloses a shift register, a gate driver, an array substrate and a display device using the capacitor. The TFT array substrate comprises a TFT gate layer, a gate insulation layer, a first ITO layer, a TFT active layer, a TFT source-drain layer, a passivation layer and a second ITO layer formed sequentially on a glass substrate, and the capacitor is consisted of the first ITO layer, the passivation layer and the second ITO layer. In addition, the second ITO layer is connected with the TFT gate layer in a region where the capacitor is located, thereby forming two capacitors connected in parallel; or, the first ITO layer is connected with the TFT gate layer in the region where the capacitor is located, thereby also forming two capacitors connected in parallel. With the present invention, a space occupied by the capacitor for the TFT array substrate is reduced, and a size of the shift register is reduced, so as to be suitable for a narrow frame design.
申请公布号 US2015340385(A1) 申请公布日期 2015.11.26
申请号 US201414408717 申请日期 2014.06.09
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Li Xiaohe;Shao Xianjie
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项
地址 Beijing CN