Method of Forming Multiple Patterning Spacer Structures

摘要

Disclosed herein is a method of forming a structure, comprising forming a mandrel layer over a substrate, masking the mandrel layer with a first mask and performing a first etch on the mandrel layer, the first etch forming a first opening exposing a first portion of the substrate. The mandrel layer is masked with a second mask and a second etch is performed on the mandrel layer. The second etch forms a second opening exposing a second portion of the substrate, and also forms a protective layer on the first portion of the substrate and in the first opening.

主权项

1. A method comprising:
depositing a mandrel layer on a substrate; forming a first patterned mask layer on the mandrel layer; etching a first opening in the mandrel layer, using the first patterned mask layer as an etch mask, the first opening exposing a portion of the substrate; removing the first patterned mask layer; forming a second patterned mask layer on the mandrel layer; etching a second opening in the mandrel layer using the second patterned mask layer as an etch mask and simultaneously forming a protective layer on the exposed portion of the substrate; and removing the second patterned mask layer.