发明名称 ION IMPLANTATION APPARATUS
摘要 An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.
申请公布号 US2015340202(A1) 申请公布日期 2015.11.26
申请号 US201514721688 申请日期 2015.05.26
申请人 Sumitomo Heavy Industries Ion Technology Co., Ltd. 发明人 Matsushita Hiroshi;Kabasawa Mitsuaki;Amano Yoshitaka;Yagita Takanori
分类号 H01J37/317;H01J37/30 主分类号 H01J37/317
代理机构 代理人
主权项 1. An ion implantation apparatus including a scanning unit, the scanning unit comprising: a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction perpendicular to the reference trajectory; and an upstream electrode device configured by a plurality of electrode bodies provided upstream of the scanning electrode device, wherein the scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween, and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween, and wherein each of the pair of beam transport correction electrodes includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.
地址 Tokyo JP