发明名称 |
ION IMPLANTATION APPARATUS |
摘要 |
An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device. |
申请公布号 |
US2015340202(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
US201514721688 |
申请日期 |
2015.05.26 |
申请人 |
Sumitomo Heavy Industries Ion Technology Co., Ltd. |
发明人 |
Matsushita Hiroshi;Kabasawa Mitsuaki;Amano Yoshitaka;Yagita Takanori |
分类号 |
H01J37/317;H01J37/30 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
1. An ion implantation apparatus including a scanning unit, the scanning unit comprising:
a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction perpendicular to the reference trajectory; and an upstream electrode device configured by a plurality of electrode bodies provided upstream of the scanning electrode device, wherein the scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween, and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween, and wherein each of the pair of beam transport correction electrodes includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device. |
地址 |
Tokyo JP |