LOW MELTING POINT SPUTTER TARGETS FOR CHALCOGENIDE PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME

摘要

In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

主权项

1. A method comprising
providing one or more ingots that collectively contain materials for producing a sputter target having a sputter target composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein: the value of x is greater than or equal to approximately 1, inclusive; the value of y is between approximately 0 and 1, inclusive; the value of z is between approximately 0 and approximately 1, inclusive; andthe total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition;
melting the one or more ingots; pouring the melted materials of the one or more ingots into a mold; and controlling a cooling rate of the materials poured into the mold to control solidification of the materials.