FIELD EFFECT TRANSISTOR

摘要

This field effect transistor (GaN HFET) is provided with: a gate electrode (13); a gate electrode pad (16); a first wiring (22) that connects one end of the gate electrode (13) to the gate electrode pad (16); a second wiring (23) that connects the other end of the gate electrode (13) to the gate electrode pad (16); and a resistor element (17) that is connected to the first wiring (22) and can adjust the impedance of the first wiring (22).