发明名称 SPUTTERING TARGET AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target with which a magnetic thin film having a large coercive force Hc can be produced, the coercive force Hc can be increased by an annealing treatment, and a manufacturing method of the target.SOLUTION: A magnetic crystal particle in a magnetic thin film of a granular structure (perpendicular magnetic recording film) is formed not with a CoPtCr alloy which is used in a current magnetic film (perpendicular magnetic recording film) but with a CoPt alloy not including Cr. WO3 and TiO2 are preferably used as an oxide to produce a CoPt-oxide film by forming the magnetic crystal particle with the CoPt alloy, and in particular WO3 is preferable. The sputtering target includes Co, Pt, and the oxide, and does not include Cr, the oxide including at least either one of WOand TiO.
申请公布号 JP2015212409(A) 申请公布日期 2015.11.26
申请号 JP20140095566 申请日期 2014.05.02
申请人 TANAKA KIKINZOKU KOGYO KK;TOHOKU UNIV 发明人 KIM KONGU;YAMAMOTO TOSHIYA;SAITO SHIN;HYUGA SHINTARO;TAKAHASHI KEN
分类号 C23C14/34;B22F3/14;C04B35/00;C22C1/05;C22C5/04;C22C19/07;C23C14/14 主分类号 C23C14/34
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