发明名称 Light Emitting Device
摘要 An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.
申请公布号 US2015340651(A1) 申请公布日期 2015.11.26
申请号 US201514816654 申请日期 2015.08.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;TAKAYAMA Toru
分类号 H01L51/52;H01L51/00;H01L27/32 主分类号 H01L51/52
代理机构 代理人
主权项 1. (canceled)
地址 Kanagawa-ken JP