METHOD FOR FORMING CHALCOGENIDE LAYERS

摘要

A method is provided for forming on a substrate a chalcogenide layer, the chalcogenide layer containing at least two metallic elements and containing Se. The method comprises depositing on the substrate a metallic layer containing the at least two metallic elements; and annealing the metallic layer in an environment comprising both a S-containing vapor such as H2S vapor and a Se-containing vapor such as H2Se vapor, thereby forming the chalcogenide layer. The annealing may for example be done at a temperature in the range between 450° C. and 550° C., resulting in a layer with good morphological quality and large grain size, the layer being free of S. A method of the various embodiments may for example be used for forming an absorber layer of a photovoltaic cell.

主权项

1. A method for forming a chalcogenide layer on a substrate, comprising:
depositing a metallic layer on a substrate, the metallic layer containing at least two different metallic elements; and annealing the metallic layer in an environment comprising both a S-containing vapor and a Se-containing vapor, whereby a chalcogenide layer is formed.